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1. product profile 1.1 general description 40 w ldmos power transistor for base station applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz 1.2 features and benefits ? typical 2-carrier w-cdma performance at frequencies of 2110 mhz and 2170 mhz, a supply voltage of 28 v and an i dq of 345 ma: ? average output power = 2.5 w ? power gain = 18.5 db (typ) ? efficiency = 16 % ? acpr = ? 50 dbc ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (2000 mhz to 2200 mhz) ? internally matched for ease of use ? integrated current sense ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2000 mhz to 2200 mhz frequency range BLF6G22LS-40BN power ldmos transistor rev. 1 ? 28 june 2012 product data sheet table 1. typical performance rf performance at t case = 25 ? c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 28 2.5 18.5 16 ? 50 [1]
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 2 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect mttf. 5. recommended operating conditions 6. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 4, 5 sense drain 6, 7 sense gate 5 1 3 4 7 2 6 sym126 1 3 2 6, 7 4, 5 table 3. ordering information type number package name description version BLF6G22LS-40BN - earless flanged ceramic package; 6 leads sot1112b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v v gs(sense) sense gate-source voltage ? 0.5 +9 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c t case case temperature [1] - 150 ?c table 5. operating conditions symbol parameter conditions min typ max unit t case case temperature ? 40 - +125 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; p l = 12.5 w (cw) 1.7 k/w
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 3 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 7. characteristics 8. test information [1] mode of operation: 1-carrier w-cdma; par 7.2 db at 0.01 % probability on ccdf; f = 2167.5 mhz. 8.1 ruggedness in class-ab operation the BLF6G22LS-40BN is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =345ma; p l = 40 w (cw); f = 2140 mhz. table 7. characteristics t j = 25 ? c per section; unless otherwise specified symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.5ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =59ma 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =28v--1.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 8.8 10 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 150 na g fs forward transconductance v ds =10v; i d =2.9a - 4.3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =2.1a -0.25- ? i dq quiescent drain current main transitor: v ds =28 v sense transitor: i ds = 7.43ma; v ds =26.7v 310 345 380 ma table 8. application information mode of operation: 2-carrier w-cdma; par 8. 4 db at 0.01 % probability on ccdf; 3gpp test model 1; 1 to 64 dpch; f 1 = 2112.5 mhz; f 2 = 2117.5 mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 345 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit symbol parameter conditions min typ max unit g p power gain p l(av) = 2.5 w 17.5 18.5 19.9 db ? d drain efficiency p l(av) = 2.5 w 13 16 - % acpr adjacent channel power ratio p l(av) = 2.5 w ? 57 ? 50 ? 45 dbc par o output peak-to-average ratio p l(av) = 20 w [1] 3.6 4.0 4.8 db rl in input return loss p l(av) = 20 w - ? 16 ? 9db
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 4 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 8.2 2-carrier w-cdma with 5 mhz carrier spacing 8.3 2-carrier w-cdma with 10 mhz carrier spacing v ds = 28 v; i dq = 345 ma; f = 2140 mhz. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 1. power gain and drain efficiency as function of load power; typical values fig 2. adjacent channel power ratio at 5 mhz and at 10 mhz as function of load power; typical values p l (w) 025 20 10 15 5 001aam457 d 14 16 12 18 20 g p (db) 10 20 30 10 40 50 d (%) 0 g p p l (w) 025 20 10 15 5 001aam458 acpr (dbc) ?40 ?20 0 ?60 ?30 ?10 ?50 acpr 5m acpr 10m v ds = 28 v; i dq = 345 ma; f = 2140 mhz. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 3. power gain and drain efficiency as function of load power; typical values fig 4. adjacent channel power ratio at 5 mhz and at 10 mhz as function of load power; typical values p l (w) 025 20 10 15 5 001aam459 d 14 16 12 18 20 g p (db) 10 20 30 10 40 50 d (%) 0 g p p l (w) 025 20 10 15 5 001aam460 acpr (dbc) ?40 ?20 0 ?60 ?30 ?10 ?50 acpr 5m acpr 10m
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 5 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 8.4 1-carrier w-cdma v ds = 28 v; i dq = 345 ma; f = 2140 mhz. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 5. power gain and drain efficiency as function of load power; typical values fig 6. adjacent channel power ratio at 5 mhz and at 10 mhz as function of load power; typical values p l (w) 025 20 10 15 5 001aam461 d 14 16 12 18 20 g p (db) 10 20 30 10 40 50 d (%) 0 g p p l (w) 025 20 10 15 5 001aam462 ?50 ?40 ?60 ?30 ?20 acpr (dbc) ?70 acpr 5m acpr 10m v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 7. peak-to-average power ratio as a function of load power; typical values p l (w) 025 20 10 15 5 001aam463 5 6 4 7 8 pa r 3
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 6 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 8.5 1-carrier is-95 v ds = 28 v; i dq = 345 ma; f = 2140 mhz. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 8. power gain and drain efficiency as function of load power; typical values fig 9. adjacent channel power ratio at 885 khz and at 1980 khz as function of load power; typical values p l (w) 010 8 46 2 001aam464 g p (db) 21 19 17 15 14 16 18 20 d (%) 35 25 15 5 0 10 20 30 d g p p l (w) 010 8 46 2 001aam465 ?60 ?50 ?70 ?40 ?30 acpr (dbc) ?80 acpr 885k acpr 1980k v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 10. peak-to-average powe r ratio as a function of load power; typical values p l (w) 010 8 46 2 001aam466 pa r 7 9 11 5 8 10 6
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 7 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 8.6 1-tone cw 8.7 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] tdk or capacitor of same quality. [3] american technical ce ramics type 100a or capacitor of same quality. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 11. power gain and drain efficiency as function of load power; typical values p l (w) 040 30 10 20 001aam467 g p (db) 13 17 21 11 15 19 9 d (%) 20 40 60 10 30 50 0 d g p table 9. list of components for test circuit see figure 12 . component description value remarks c3, c8, c9 multilayer ceramic chip capacitor 33 pf [1] c5 multilayer ceramic chip capacitor 1.0 pf [1] c6 multilayer ceramic chip capacitor 100 nf [2] c10 multilayer ceramic chip capacitor 33 pf [3] c11, c15 multilayer cera mic chip capacitor 47 pf [3] c12 multilayer ceramic chip capacitor 10 ? f [2] c13 electrolytic capacitor 470 ? f; 63 v r1 smd resistor 10 ? philips 0603 r2 smd resistor 820 ? philips 0603 r3 smd resistor 1.8 k ? philips 0603
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 8 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 8.8 impedance information printed-circuit board (pcb): taconic rf-35a; ? r = 3.5 f/m; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 12. component layout for class-ab production test circuit 001aam468 r2 nxp blf6g22l_40bn input nxp blf6g22l_40bn output c10 c15 c5 c9 c8 c11 c12 r1 r3 c3 c6 c13 table 10. typical impedance typical values valid for both section in parallel unless otherwise specified. f z s z l (mhz) (? ) (? ) 2050 3.3 ? j12.2 13 ? j11.2 2140 4.5 ? j12.8 12.2 ? j6.9 2230 10 ? j15.3 13.3 ? j5.5 fig 13. definition of transistor impedance 001aaf059 drain z l z s gate
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 9 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 9. package outline fig 14. package outline sot1112b references outline version european projection issue date iec jedec jeita sot1112b sot1112b_po unit (1) mm max nom min 4.65 3.76 1.83 1.57 0.18 0.10 9.65 9.40 9.65 9.40 9.65 9.40 1.14 0.89 17.12 16.10 9.91 9.65 0.51 a dimensions earless flanged ceramic package; 6 leads sot1112b bb 1 5.26 5.00 cdd 1 ee 1 9.65 9.40 fhl 3.63 3.38 q (2) 1.70 1.45 u 1 9.91 9.65 u 2 w 2 inches max nom min 0.183 0.148 0.072 0.062 0.007 0.004 0.38 0.37 0.38 0.37 0.38 0.37 0.045 0.035 0.674 0.634 0.39 0.38 0.02 0.207 0.197 0.38 0.37 0.143 0.133 0.067 0.057 0.39 0.38 0 5 10 mm scale a d f d 1 l d e q e 1 c u 2 3 u 1 z 1 z h b b 1 d w 2 5 4 1 7 6 2 note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. z 2 y 12-04-11 12-06-14 11.51 10.62 0.453 0.418 4.60 4.34 0.181 0.171 0.15 0.0059 z yz 1 15.52 14.50 0.611 0.571 z 2 64 62 64 62
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 10 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 10. handling information 11. abbreviations 12. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous waveform dpch dedicated physical channel esd electrostatic discharge is-95 interim standard 95 ldmos laterally diffused metal-oxide semiconductor mttf mean time to failure par peak-to-average ratio smd surface mounted device vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 12. revision history document id release date data sheet status change notice supersedes BLF6G22LS-40BN v.1 20120628 product data sheet - -
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 11 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF6G22LS-40BN all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 28 june 2012 12 of 13 nxp semiconductors BLF6G22LS-40BN power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF6G22LS-40BN power ldmos transistor ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 28 june 2012 document identifier: BLF6G22LS-40BN please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 recommended operating conditions. . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 8.1 ruggedness in class-ab operation . . . . . . . . . 3 8.2 2-carrier w-cdma with 5 mhz carrier spacing 4 8.3 2-carrier w-cdma with 10 mhz carrier spacing 4 8.4 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 5 8.5 1-carrier is-95 . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.6 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.7 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.8 impedance information . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 handling information. . . . . . . . . . . . . . . . . . . . 10 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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